发明名称 |
Integrated semiconductor circuit with capacitors of precisely defined capacitance and process for producing the circuit |
摘要 |
An integrated semiconductor circuit, such as an A/D converter, includes a first zone having capacitors disposed therein. The capacitors have capacitor plates being formed of a first conductive layer and a second conductive layer. A second zone has circuit elements disposed therein. A planarizing layer and a cover layer insulate the first and second conductive layers from one another in the second zone, except for a possible peripheral region. A dielectric is formed only of the cover layer between the capacitor plates in the first zone, except for a possible peripheral region. A process for producing an integrated semiconductor circuit includes producing the first conductive layer; applying an insulating planarizing layer after producing the first conductive layer; removing the planarizing layer in the first zone until a surface of the first conductive layer is exposed, except for a possible peripheral region; applying an insulating cover layer over the entire surface; and producing the second conductive layer.
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申请公布号 |
US5844302(A) |
申请公布日期 |
1998.12.01 |
申请号 |
US19970847867 |
申请日期 |
1997.04.28 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HAIN, MANFRED;FISCHER, ELISABETH |
分类号 |
H01L21/02;H01L27/08;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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