Method for forming a wiring layer a semiconductor device

摘要

A method for forming wiring layer of a semiconductor device for improving the step coverage and filling of the contact hole is disclosed. After forming an underlayer of the wiring layer on a semiconductor substrate, the surface of the underlayer is hydrogen-treated by exposing the underlayer to hydrogen plasma or hydrogen radicals to thereby H-terminate the surface portion of the underlayer. Thus, the characteristics of the underlying layer is improved. When depositing a metal such aluminum or aluminum alloy on the underlayer to thereby form a first conductive layer, large grains of the deposited metal are obtained. The step coverage of the deposited metal layer is enhanced and the mobility of the metal grains is increased. When sputtering the metal at a high temperature or when heat-treating the metal layer which has been formed at a low temperature, the filling of the metal into the contact hole is improved.