发明名称 |
Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus |
摘要 |
A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard aligned with the platen has an extension extending over a frontside peripheral region of the wafer. Deposition control gas is introduced under the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a wafer frontside peripheral region. The restrictive opening provides a uniform pressure of deposition control gas at the edge and frontside of the wafer to prevent deposition on the wafer edge and backside.
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申请公布号 |
US5843233(A) |
申请公布日期 |
1998.12.01 |
申请号 |
US19950485191 |
申请日期 |
1995.06.07 |
申请人 |
NOVELLUS SYSTEMS, INC. |
发明人 |
VAN DE VEN, EVERHARDUS P.;BROADBENT, ELIOT K.;BENZING, JEFFREY C.;CHIN, BARRY L.;BURKHART, CHRISTOPHER W.;LANE, LAWRENCE C.;MCINERNEY, EDWARD J. |
分类号 |
C30B25/12;C23C16/04;C23C16/44;C23C16/455;C23C16/458;C23C16/54;C30B25/14;H01L21/00;H01L21/205;H01L21/285;H01L21/31;H01L21/683;H01L21/687;(IPC1-7):C23C16/06 |
主分类号 |
C30B25/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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