| 发明名称 |
SEMICONDUCTOR RECTIFYING DIODE |
| 摘要 |
A semiconductor rectifying diode includes a first semiconductor region of one conductivity type, a plurality of third semiconductor regions of the other conductivity type provided on one surface of said first semiconductor region to be spaced a distance W, and a main electrode provided on said one main surface in ohmic contact with said first semiconductor region and in contact with said third semiconductor regions through the Schottky barrier. To reduce reverse leakage current a relation of 2wo<W</=3D is satisfied, where D is the depth of said third semiconductor regions and wo is the width of a depletion layer spread to said first semiconductor region by a diffusion potential of the pn junction formed between said first semiconductor region and said third semiconductor region. |
| 申请公布号 |
KR0163189(B1) |
申请公布日期 |
1998.12.01 |
| 申请号 |
KR19900013209 |
申请日期 |
1990.08.27 |
| 申请人 |
HITACHI LTD |
发明人 |
KOSAKA, HIROSHI;MURAKAMI, SUSUMU;TAKATA, MASANORI;YAGINUMA, TAKAO;KOHNO, NAOFUMI |
| 分类号 |
H01L29/47;H01L29/861;H01L29/872;H02M3/28 |
主分类号 |
H01L29/47 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
