| 摘要 |
Integrated circuit memory devices having improved data masking capability include a memory cell array having a plurality of bit lines coupled thereto and a first sense amplifier that has first and second inputs that are electrically coupled to first and second input lines, respectively, and at least one output electrically coupled to a first bit line in the plurality thereof. A preferred data driving circuit is also provided that is responsive to a data masking signal so that first and second outputs of the data driving circuit are placed in preferred high impedance states that can be more easily equalized to prevent amplification by a sense amplifier coupled thereto by the first and second input lines. Thus, rather than always having the complementary outputs of the data driving circuit be functionally dependent on the input data, the outputs can be automatically set to high impedance levels that can be more readily equalized and pulled-up or pulled-down to a reference potential, upon application of a data masking signal.
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