发明名称 |
Field emission element with single crystalline or preferred oriented polycrystalline emitter or insulating layer |
摘要 |
A process for manufacturing a field emission element including a substrate, and an emitter and a gate each arranged on the substrate is provided. The emitter is formed at at least a tip portion thereof with an electron discharge section, which is formed of metal or semiconductor into a monocrystalline structure or a polycrystalline structure preferentially oriented in at least a direction perpendicular to the substrate by deposition.
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申请公布号 |
US5844250(A) |
申请公布日期 |
1998.12.01 |
申请号 |
US19950483853 |
申请日期 |
1995.06.07 |
申请人 |
FUTABA DENSHI KOGYO K.K, |
发明人 |
ITOH, SHIGEO;YAMADA, ISAO |
分类号 |
H01J9/02;(IPC1-7):H01L29/12;H01J1/14;H01J1/48;H01J9/12 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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