发明名称 Field emission element with single crystalline or preferred oriented polycrystalline emitter or insulating layer
摘要 A process for manufacturing a field emission element including a substrate, and an emitter and a gate each arranged on the substrate is provided. The emitter is formed at at least a tip portion thereof with an electron discharge section, which is formed of metal or semiconductor into a monocrystalline structure or a polycrystalline structure preferentially oriented in at least a direction perpendicular to the substrate by deposition.
申请公布号 US5844250(A) 申请公布日期 1998.12.01
申请号 US19950483853 申请日期 1995.06.07
申请人 FUTABA DENSHI KOGYO K.K, 发明人 ITOH, SHIGEO;YAMADA, ISAO
分类号 H01J9/02;(IPC1-7):H01L29/12;H01J1/14;H01J1/48;H01J9/12 主分类号 H01J9/02
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