发明名称 |
THIN-FILM TRANSISTOR SUBSTRATE AND MANUFACTURE THEREOF |
摘要 |
A method of fabricating a thin film transistor of an inverted stagger structure having a gate terminal, a gate insulator a semiconductor film, a source electrode and a drain electrode formed in that order; a gate terminal and a gate wiring are provided for supplying a scanning signal to the gate electrode; and a source terminal and a source wiring are provided for supplying a data signal to the source electrode, wherein the gate terminal is formed on an upper side of the gate insulating film and electrically connected to the gate wiring through a contact hole formed in the gate insulator. |
申请公布号 |
KR0154347(B1) |
申请公布日期 |
1998.12.01 |
申请号 |
KR19940029685 |
申请日期 |
1994.11.12 |
申请人 |
FRONTEC INC. |
发明人 |
SASAKI, MAKOTO;FUKUI, HIROFUMI;MIYAZAKI, MASANORI;SEKI, HITOSHI;KASAMA, ASUHIKO |
分类号 |
G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L29/78;H01L29/786;(IPC1-7):H01L21/02 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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