Dry-etch of indium and tin oxides with C2H5I gas

摘要

An RIE method and apparatus for etching through the material layer of a transparent-electrode (ITO) in a single continuous step at a rate better than 100 ANGSTROM /min and with a selectivity better than 20 to 1 is disclosed. Chamber pressure is maintained at least as low as 60 mTorr. A reactive gas that includes ethyl iodide C2H5I) is used alone or in combination with another gas such as O2. Plasma-induced light emissions of reaction products and/or the reactants are monitored to determine the time point of effective etch-through.