Memory cell having increased capacitance via a local interconnect to gate capacitor and a method for making such a cell
摘要
A static random access memory (SRAM) cell having increased cell capacitance at the storage nodes utilizes a capacitive structure. The capacitive structure includes a dielectric material between polysilicon conductive lines and tungsten local interconnects. The polysilicon plates are each connected to drains of lateral transistors associated with the SRAM cell. A dielectric material such as silicon dioxide may be deposited between the local interconnect and polysilicon conductive lines. The capacitor structures are provided between first and second N-channel pull down transistors associated with the SRAM cell.
申请公布号
US5844836(A)
申请公布日期
1998.12.01
申请号
US19970822518
申请日期
1997.03.24
申请人
ADVANCED MICRO DEVICES, INC.
发明人
KEPLER, NICHOLAS JOHN;SELCUK, ASIM A.;KLEIN, RICHARD K.;SANDER, CRAIG S.;HOLST, JOHN C.;SPENCE, CHRISTOPHER A.;LEE, RAYMOND T.;HORNE, STEPHEN C.