| 发明名称 |
Tunneling technology for reducing intra-conductive layer capacitance |
| 摘要 |
The control speed of semiconductor circuitry is increased by forming air tunnels in the interwiring spaces of a conductive pattern to reduce intra-conductive layer capacitance.
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| 申请公布号 |
US5843836(A) |
申请公布日期 |
1998.12.01 |
| 申请号 |
US19960744655 |
申请日期 |
1996.11.06 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CHEUNG, ROBIN W.;CHAN, SIMON S.;HUANG, RICHARD J. |
| 分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/441 |
主分类号 |
H01L21/768 |
| 代理机构 |
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