发明名称 |
Semiconductor wafer etching process and semiconductor device |
摘要 |
A first semiconductor layer and a second semiconductor layer are laminated on a semiconductor wafer in that order. A resist pattern having an opening is formed on the second semiconductor layer. The second semiconductor layer is etched through the opening in the formed resist pattern to expose the first semiconductor layer. A surface oxide film is formed on the exposed surface of the first semiconductor layer and then selectively etched away. Alternatively, the exposed surface of the first semiconductor layer is subjected to a separate oxidization treatment and the resulting surface oxide film is selectively removed in the subsequent etching.
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申请公布号 |
US5843849(A) |
申请公布日期 |
1998.12.01 |
申请号 |
US19960662632 |
申请日期 |
1996.06.13 |
申请人 |
NIPPONDENSO CO., LTD.;RESEARCH DEVELOPMENT CORPORATION OF JAPAN |
发明人 |
HOSHINO, KOUICHI;UENO, YOSHIKI;KOUYA, TAKUYA |
分类号 |
H01L29/41;H01L21/306;H01L21/335;H01L21/338;H01L29/778;H01L29/812;(IPC1-7):H01L21/302 |
主分类号 |
H01L29/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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