发明名称 |
Method of contact hole burying |
摘要 |
A contact hole burying method is provided including the steps of: coating an oxide layer on a substrate and removing the oxide layer except for a portion thereof to form a contact hole extending through the oxide layer in electrical contact with the oxide layer; sequentially forming a metal barrier layer and wet layer on the oxide layer and inside the contact hole to form an electrical connection to the substrate; forming a conductive metal layer on the wet layer; removing impurity ions and oxide material, which remain in the conductive metal layer which decrease mobility of metal atoms on a surface of said conductive layer due to absorption and oxidation, by a cleaning-etching process using a plasma; and reflowing the conductive metal layer at a relatively low temperature in a reactive furnace where the cleaning-etching process is performed to completely fill the contact hole.
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申请公布号 |
US5843837(A) |
申请公布日期 |
1998.12.01 |
申请号 |
US19960719878 |
申请日期 |
1996.09.25 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
BAEK, JONG-TAE;KIM, YOUN-TAE;YOO, HYUNG-JOUN |
分类号 |
H01L21/28;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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