| 摘要 |
This invention refers to a novel pressure sensing microelectromechanical device of the piezoresistive type, made of mono-crystalline silicon, for pressure range usual in medicine (0 to 100 kPa), which delivers differential voltage outlet. This invention object is to obtain a pressure sensing microelectromechanical device different from commercial existent, utilizing piezoresistive effect in MOS transistors channel as sensitive element which integrates a compensating circuit utilizing witness MOS transistors, in an arrangement and interconnection in Wheatstone bridge circuit, which improves its performance at temperature variations and increases its tolerance to misalignment variations on its manufacture, and only MOS technology is utilized thereby simplifying its construction, and reducing its cost and delivers outlet differential voltage.
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