| 摘要 |
In an apparatus for the production of single crystals (103) by the Czochralski melt drawing method, a gripping device (125a, 125b) is provided, by means of which the crystal (103) is held during the growing process by a pressure which is exerted radially on its lateral surface and which exceeds the frictional resistance, as a result of which the weight of the growing crystal is completely supported. The gripping device (125a, 125b) has at least two holding devices (128a, 128b) arranged opposite each other, which, during the crystal growth phase, initially move parallel to the crystal and then, after a certain desired crystal diameter has been reached, are laid against the crystal by means of the holding devices (128a, 128b) in such a way that the growth the crystal in the area of the melting zone is not disturbed. |
