| 摘要 |
<p>An image sensor comprising an array of pixels (2), each pixel (2) including a pin or nip photodiode P. At least the intrinsic semiconductor layer of the photodiodes of a group of pixels is shared between those pixels and acts as a barrier to reduce edge leakage currents. A group of pixels may be a row of pixels, or may be all pixels of the array.</p> |
