发明名称 APPARATUS AND METHOD FOR SPUTTER DEPOSITING DIELECTRIC FILMS ON A SUBSTRATE
摘要 Apparatus and method for sputter depositing a layer of material comprises a sputtering chamber (10) having an internal conductive wall (12) which provides an electrical reference for plasma during sputter deposition. A conductive shield (32) positioned in the processing space (14) of the chamber (10) between the target (20) and the substrate (24) is configured for capturing sputtered material which would deposit on the chamber wall surface (12) during sputter deposition. The conductive shield (32) reduces the amount of sputtered material (40) depositing on the chamber wall (12) and maintains a surface portion of the wall (12) as a generally stable electrical reference for the plasma and is further operable for passing plasma therethrough during deposition to contact the stable electrical reference.
申请公布号 WO9853117(A1) 申请公布日期 1998.11.26
申请号 WO1998US10516 申请日期 1998.05.21
申请人 TOKYO ELECTRON ARIZONA, INC. 发明人 LANTSMAN, ALEXANDER, D.
分类号 C23C14/34;C23C14/56;H01J37/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
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