Self-aligning silicide manufacturing method

摘要

The method involves, on a substrate (21), depositing a first insulation layer (25), which is anisotropically over-etched to remove the layer and to form spacing elements (26) on corresponding side walls of the gate region (23) and for simultaneous removing a part of the top layer of the insulator regions (24). Second type ions are implanted with an inclination angle into the metal-oxide-semiconductor (MOS) component region (22), using the spacing elements and gate region as a mask to form several source/drain regions (27) in the substrate on each side of the gate region. A metal film is formed on a substrate surface, the MOS component region and the spacing elements. A rapid thermal treatment results in a metal-silicide layer (31), followed by specified process steps.