| 摘要 |
The invention relates to a single-electron memory component having two nodal matrices (granular films) (1, 7) which are linked by capacitive coupling either via a guide electrode (3) or by direct mutual overlapping. Their memory content can be read by the change in the voltage-current characteristic of one of the nodal matrices (7), or by the presence or absence of current oscillations in this nodal matrix (7). |
