| 摘要 |
<p>A composite (M) comprising an α-SiC single crystal substrate (1) and a β-SiC polycrystal plate (2) formed on the surface of the substrate (1) by thermal CVD is heat-treated at a temperature as high as 1900 to 2400 °C to transform the polycrystal of the polycrystal plate (2) to a single crystal which is aligned in the same orientation as the crystal axis of the single crystal substrate (1) and integrated with the single crystal of the single crystal substrate (1) to grow the single crystal into a large size, thus enabling a good single crystal SiC suffering from only very small lattice defect and micropipe defect to be efficiently prepared while ensuring a large area.</p> |
