| 摘要 |
<p>The contact resistances of the electrodes of a semiconductor device, for example, the emitter and collector of an HBT are lowered by providing contact layers containing impurities at high concentration on a plurality of portions of a compound semiconductor layer isolated from each other by a prescribed crystal growth surface. A method for manufacturing the semiconductor device, comprising the steps of forming a recrystallization growth layer including a contact layer and having a predetermined crystal growth face, e.g., the (111)-B face or (311)-A face as a side face by selective growth adjacently to a part of a semiconductor element including a contact layer formed on a substrate having a prescribed crystal face, e.g., the (109) face, and isolating the contact layer. This semiconductor device is useful for high-output small power-consumption amplifiers for satellite communication or portable telephone sets for mobile communication.</p> |
