发明名称 |
Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation |
摘要 |
<p>Electron flood apparatus for neutralising positive charge build-up on a substrate during implantation of ions in a substrate by ion beam implantation apparatus. The electron flood apparatus comprises a tube (13) for axially receiving and passing an ion beam (12) to a substrate (10), an opening (14) in a sidewall of the tube, a plasma chamber (15) having an exit aperture (16) in communication with said opening of said tube, a supply (17) of inert gas to said plasma chamber, a high frequency power generator (19), and means (20,18) to deliver high frequency power from said generator to maintain a plasma in said chamber to produce low energy electrons, whereby a flux of said low energy electrons emerges from said chamber through said exit aperture into said tube to merge with the ion beam. <IMAGE></p> |
申请公布号 |
EP0880161(A1) |
申请公布日期 |
1998.11.25 |
申请号 |
EP19980303971 |
申请日期 |
1998.05.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ITO, HIROYUKI;QIAN, XUE-YU;MITCHELL, ROBERT J.;MOFFATT, STEPHEN |
分类号 |
H01J37/20;H01J37/02;H01J37/077;H01J37/317;H01L21/265;(IPC1-7):H01J37/02 |
主分类号 |
H01J37/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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