发明名称 Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation
摘要 <p>Electron flood apparatus for neutralising positive charge build-up on a substrate during implantation of ions in a substrate by ion beam implantation apparatus. The electron flood apparatus comprises a tube (13) for axially receiving and passing an ion beam (12) to a substrate (10), an opening (14) in a sidewall of the tube, a plasma chamber (15) having an exit aperture (16) in communication with said opening of said tube, a supply (17) of inert gas to said plasma chamber, a high frequency power generator (19), and means (20,18) to deliver high frequency power from said generator to maintain a plasma in said chamber to produce low energy electrons, whereby a flux of said low energy electrons emerges from said chamber through said exit aperture into said tube to merge with the ion beam. &lt;IMAGE&gt;</p>
申请公布号 EP0880161(A1) 申请公布日期 1998.11.25
申请号 EP19980303971 申请日期 1998.05.19
申请人 APPLIED MATERIALS, INC. 发明人 ITO, HIROYUKI;QIAN, XUE-YU;MITCHELL, ROBERT J.;MOFFATT, STEPHEN
分类号 H01J37/20;H01J37/02;H01J37/077;H01J37/317;H01L21/265;(IPC1-7):H01J37/02 主分类号 H01J37/20
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