| 摘要 |
PURPOSE:To remove photo resist at a practical processing rate and at a temperature lower than that, at which thermal diffusion of heavy metal takes place, by feeding weakly ionized oxygen plasma, generated in an independent chamber, through a plasma transporting pipe into a vacuum chamber and then prolonging the lifetime and increasing the density of oxygen radicals in the vicinity of a wafer by means of an ultraviolet light source. CONSTITUTION:Oxygen gas is introduced into a discharge chamber 12 and weakly ionized oxygen plasma is generated through high frequency discharge. The weakly ionized plasma, containing oxygen radicals and oxygen ions, is then introduced through a plasma transportation pipe 13 into a vacuum chamber 11. Oxygen radicals and oxygen molecules having no charge, introduced into the vacuum chamber 11, are then irradiated with ultraviolet ray from an ultraviolet light source 15 in the vacuum chamber 11 and imparted with energy thus prolonging the lifetime and increasing the density of the oxygen radical. Furthermore, since it takes place in the vicinity of a wafer 16, photo resist can be removed at a practical rate even when the temperature of the wafer is relatively low. |
