| 摘要 |
<p>A read only memory has a plurality of blocks (BLK*) of memory cells, each block being associated with main bitlines (MBL*) and sub-bitlines (SB*). Sense amplifiers (SA*) are provided for reading information stored in the memory cells (M*) through the main bitlines. The memory has a block selection part (SSB*) disposed between adjacent blocks with a plurality of block selection transistors (STO*, STE*) for connecting the main bitlines to the sub-bitlines. The sub-bitlines extend to at least an adjacent block and are selectively connectable to the main bitlines through the block selection part. <IMAGE></p> |
