| 发明名称 |
Method for contacting a semiconductor device |
| 摘要 |
<p>An electrical contact (46) to a phosphorous doped polysilicon gate electrode (18) is formed by preventing arsenic, from a source and drain implant, from doping a portion (22) of the polysilicon gate electrode (18). A photoresist mask (20) covers a portion (22) of the polysilicon gate electrode (18) during the implant, thus preventing it from being doped. An electrical contact (46) is then formed to the masked portion (22) of the polysilicon gate electrode (18). <IMAGE></p> |
| 申请公布号 |
EP0589159(B1) |
申请公布日期 |
1998.11.25 |
| 申请号 |
EP19930111016 |
申请日期 |
1993.07.09 |
| 申请人 |
MOTOROLA, INC. |
发明人 |
CHERNIAWSKI, MICHAEL;KAUSHIK, VIDYA S.;BARKER, JEFFREY M.;PYLE, RONALD E. |
| 分类号 |
H01L21/265;H01L21/28;H01L21/768;H01L23/485;(IPC1-7):H01L21/28;H01L21/285 |
主分类号 |
H01L21/265 |
| 代理机构 |
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代理人 |
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| 主权项 |
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