| 摘要 |
<p>We have made the unexpected discovery that a dielectric layer (83) consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors (80), typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3 mu coulomb/cm<2>. In a currently preferred embodiment, the dielectric layer has composition Ta1-y A1y Ox Nz, with y SIMILAR 0.1, x SIMILAR 2.4, and z SIMILAR 0.02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e.g., chemical vapor deposition. <IMAGE></p> |
