| 摘要 |
<p>A MOSFET (11) constituting a flip-flop circuit and a MOSFET (12) for control of reading and writing data out of and into a memory cell are formed on a semiconductor (21). The gate electrode (14) of the first MOSFET (11) and the gate electrode (15) of the second MOSFET (12) are formed by layers of different levels. The gate electrodes (14) and (15) has an overlapped portion R. The first and second MOSFETs are arranged symmetrically with respect to a certain point P. By virtue of the above structure, the degree of integration of a static RAM is enhanced. <IMAGE></p> |
