发明名称 |
Integrated waveguide device and fabricating method thereof |
摘要 |
A method of fabricating an integrated waveguide device includes forming a ridge having a width that varies in a tapered shape along the [011] direction on a semiconductor substrate and growing a laminated layer structure including a light waveguide layer where the width varies in a tapered shape of the ridge so that a waveguide has a tapered shape in the laminated layer structure, thereby producing an integrated waveguide device having a tapered light waveguide. The thickness of the semiconductor layer and the wavelength guided by the waveguide are controlled with high precision and the reliability of the device is enhanced. |
申请公布号 |
GB2294361(B) |
申请公布日期 |
1998.11.25 |
申请号 |
GB19950021161 |
申请日期 |
1995.10.16 |
申请人 |
* MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KATSUHIKO * GOTO |
分类号 |
H01L21/205;G02B6/12;G02B6/122;H01L21/208;H01L21/428;H01L27/15;H01S5/00;H01S5/026;H01S5/042;H01S5/10;H01S5/20;H01S5/227;(IPC1-7):G02B6/12 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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