发明名称 Integrated waveguide device and fabricating method thereof
摘要 A method of fabricating an integrated waveguide device includes forming a ridge having a width that varies in a tapered shape along the [011] direction on a semiconductor substrate and growing a laminated layer structure including a light waveguide layer where the width varies in a tapered shape of the ridge so that a waveguide has a tapered shape in the laminated layer structure, thereby producing an integrated waveguide device having a tapered light waveguide. The thickness of the semiconductor layer and the wavelength guided by the waveguide are controlled with high precision and the reliability of the device is enhanced.
申请公布号 GB2294361(B) 申请公布日期 1998.11.25
申请号 GB19950021161 申请日期 1995.10.16
申请人 * MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KATSUHIKO * GOTO
分类号 H01L21/205;G02B6/12;G02B6/122;H01L21/208;H01L21/428;H01L27/15;H01S5/00;H01S5/026;H01S5/042;H01S5/10;H01S5/20;H01S5/227;(IPC1-7):G02B6/12 主分类号 H01L21/205
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