| 摘要 |
A film of SiO2, formed by thermal decomposition of an alkoxysilane on to a substrate, is heated at above 800 DEG C., preferably at 800-1000 DEG C., in an oxidizing or inert atmosphere, which may be a vacuum, or a rare gas, steam, nitrogen, or oxygen, or a mixture of these, or in several such atmospheres sequentially. The alkoxysilane is carried in an inert gas over a substrate heated to at least 600 DEG C. to effect decomposition; it may be dimethyl or diphenyl diethoxysilane, amyl phenyl or vinyl triethoxysilane, or tetraethoxysilane. The subsequent treatment, e.g. for 5-15 mins., is said to densify the film and to increase its refractive index. The coating of silicon wafers is described, and reference is made to coating the surfaces of germanium, intermetallic compounds, other metals, and refractories.
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