| 发明名称 |
Method for producing semiconductor device and apparatus for treating semiconductor device |
| 摘要 |
In forming an insulating film for a thin film transistor (TFT), a thermal oxidation film is formed by oxidation of silicon film at 500 DEG to 700 DEG C. or an insulating film composed mainly of silicon oxide deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is formed so as to cover island-like crystalline silicon, and then the resulting film is annealed at 400 DEG to 700 DEG C., preferably 450 DEG to 650 DEG C. in a highly reactive atmosphere of nitrogen oxide which is photoexcited or photodecomposed by ultraviolet rays. The thus modified silicon oxide film is used as the gate insulating film.
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| 申请公布号 |
US5840600(A) |
申请公布日期 |
1998.11.24 |
| 申请号 |
US19950521534 |
申请日期 |
1995.08.30 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;SAKAMA, MITSUNORI;TAKEMURA, YASUHIKO |
| 分类号 |
H01L21/20;H01L21/28;H01L21/3105;H01L21/314;H01L21/316;H01L21/336;(IPC1-7):H01L21/02;H01L21/302;H01L21/324;H01L21/329 |
主分类号 |
H01L21/20 |
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