Method of fabricating integrated circuit interconnection employing tungsten/aluminum layers

摘要

An improved integrated circuit interconnection for interconnecting at least two conductive regions within an integrated circuit, and method for producing the same. The interconnection includes a tungsten layer and a barrier layer to provide a low contact resistance within the interconnection and between the conductive regions and the interconnection. The interconnection also includes an aluminum layer for providing a low sheet resistance in the current path between the two conductive regions. Thus the invention combines the advantages of an all tungsten interconnection with those of a tungsten capsuled aluminum interconnection.