| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress the warpage in the center of a wafer and to increase the uniformity of the temperature of the wafer, by a method wherein the wafer is supported by a pedestal, the outer peripheral part of the wafer is mechanically clamped to the pedestal by a mechanical clamp part, and the wafer is electrostatically clamped to the pedestal in the center of the wafer by an electrostatic clamp. SOLUTION: This chuck clamps a wafer 202 to a pedestal 204 by both of a mechanical clamp and an electrostatic clamp in the interior of a process chamber 200. The pedestal 204 is provided with a bipolar electrostatic chucking unit 216 arranged in its center. This unit 216 has a wafer support surface arranged roughly flush with a pedestal surface 205 (wafer support surface). An electric field is formed in the center of the pedestal 204 by this unit 216. This electric field attracts the center of the wafer of a thickness of 300 mm near toward it and corrects the warpage in the center of the wafer. As a result, the uniformity of the temperature of the wafer can be increased.</p> |
