发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To reduce bit line capacity by cutting down the numbers of bit line contacts in a sense amplifier. SOLUTION: An element pattern of columnar gate and another element pattern of equalizer circuit are formed as a fused element pattern. For example, a transistor having a gate G1 as a component of a columnar gate, another transistor having gate G3 as a component of an equalizer circuit and the other transistor having gate G5 share a diffused layer S2 to be a common node N1. Likewise, common nodes N2, N3 and N4 are commonly owned respectively by one transistor constituting a columnar gate and the other two transistors constituting a bit equalizer. Furthermore, the common nodes N2, N3 and N4 are respectively connected to the bit lines via the bit line contacts.
申请公布号 JPH10313101(A) 申请公布日期 1998.11.24
申请号 JP19970119639 申请日期 1997.05.09
申请人 TOSHIBA CORP 发明人 INABA TSUNEO;TSUCHIDA KENJI;SHIRATAKE SHINICHIRO
分类号 G11C11/401;G11C7/10;G11C7/12;G11C7/18;H01L21/8242;H01L27/108 主分类号 G11C11/401
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