| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device on which sufficient focal depth can be secured, even for a coarse pattern and the generation of a pattern transfer defect by an unnecessary resist residue can be prevented, when a microscopic pattern is formed in a lithographic process in the manufacture of a semiconductor device. SOLUTION: After a resist image 26 of the mainline pattern of a line width 0.20 μm and resist images 28a and 28b of an auxiliary pattern of a line width 0.05 μm have been resolved by performing exposing and developing operations using a mask, in which an auxiliary pattern of line width 0.625 μm is arranged on the left and the right sides of the mainline pattern of line width 1.0 μm, the resist images 28a and 28b of the auxiliary pattern are completely removed by performing isotropic resist ashing operation, the resist image 26 of the mainline pattern is thinned off by 0.05 μm, and the resist image of the main line pattern of 0.15 μm in line width is formed. |
