| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma-etching method with which the organic antireflection film can be patterned in a highly precise manner on a base material layer having a stepping. SOLUTION: An organic antireflection film 6 is plasma-etched by a halogen compound, having a thionyl group or a sulfuryl group and a halogen atom in a molecule, such as SOCl-containing an etching gas, for example. As a result, a solid sidewall protective film 8, which is mainly composed of a carbon polymer having superior etching resistance, is formed on the side face of a resist pattern 7 and the organic antireflection film 6 which is being patterned, and an undercut and the differences in dimensional conversion can be prevented. |
