发明名称 MANUFACTURE OF ZINC OXIDE THIN FILM, PHOTOSENSOR USING THE SAME AND MANUFACTURE OF SEMICONDUCTOR ELEMENT SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To form irregularities on the surface by feeding a current between a conductive substrate and anode electrode both immersed in a water soln., contg. at least Zn ions, ammonia ions and Zn-ammonia complex ions to form a zinc oxide film on the substrate. SOLUTION: A conductive substrate 103 is formed as a cathode and a counter electrode as an anode. When a source of complex ions such as Zn ions and excessive ammonia ions uses, e.g. a water soln. of ammonia with zinc hydroxide, the complex ion concn. is set to 0.001-3.0 mol./l with a water soln. pH controlled to be 8-12.5, the temp. is set for over 50 deg.C, and the current density on the surface of the substrate 103 is set to 0.1-100 mA/cm<2> . Generally, the higher ion concn. provides larger grain size of zinc oxide enabling irregularities to be formed on the surface.
申请公布号 JPH10313127(A) 申请公布日期 1998.11.24
申请号 JP19970121921 申请日期 1997.05.13
申请人 CANON INC 发明人 SANO MASAFUMI;SONODA YUICHI
分类号 C01G9/02;C25D9/04;C25D9/08;H01L31/0216;H01L31/0236;H01L31/04 主分类号 C01G9/02
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