| 摘要 |
PROBLEM TO BE SOLVED: To prevent a recording layer from being stripped off from a dielectric layer principally comprising a nitride after a moisture resistant test by setting the degree of vacuum in a film forming chamber at a specified level or below before a sputtering gas is introduced when a protective layer is formed by sputtering. SOLUTION: The degree of vacuum in a film forming chamber is set at 1×10<-2> Pa or below before a sputtering gas is introduced. In order to attain such a degree of vacuum, conditions of a substrate being disposed in the film forming chamber are set as follows. Moisture content is set at 0.1 wt.% or below or a substrate preserved in a chamber of following atmosphere is employed. Relative humidity(RH) of 10% or below, 15% or below at 50 deg.C or below, 20% or below at 45 deg.C or below, and 30% or below at 35 deg.C or below. Alternatively, a substrate passed through a dry tunnel of following atmosphere is employed. RH of 15% or below, 20% or below at 50 deg.C or below, 30% or below at 45 deg.C or below, 35% or below at 35 deg.C or below, and 40% or below at 25 deg.C or below.
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