| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a capacitor dielectric layer in high specific inductive capacity as well as small leakage current. SOLUTION: A storage node is formed on an interlayer insulating layer 27, so as to be in contact with source/drain regions 15 of a MOS transistor 20 passing through a plug layer 9. Further, a cell plate 5 is formed opposite to this storage node 1 via a capacitor dielectric layer 3. In such a constitution, the storage node 1 is made of Ru in orientation degree (002) which exceeds 95%. |
