| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device capable of forming a capacitor in high reliability also in large capacity per shared area on a semiconductor substrate. SOLUTION: In order to pattern an SiO film 4 formed on a polycrystalline silicon film 3, the SiO film 4 is etched by RIE process, using a polycrystalline silicon film 5 patterned after a specific shape as a mask as well as a mixed gas of a C4 F8 gas, CO gas, Ar gas and O2 gas as an etching gas. Later, a polycrystalline silicon film 7 is formed on the whole surface so that the polycrystalline silicon films 7, 5 may be etched back, until the surface of the polycrystalline silicon film 3 is exposed for leaving the polycrystalline silicon film 7 only on the sidewall of the SiO2 film 4 also removing the polycrystalline silicon film 5 and the SiO2 film 4, so that an under part electrode in almost vertical three dimensional shaped lower part electrode, made of the polycrystalline silicon films 3 and 7 may be formed. |
