III-V COMPOUND SEMICONDUCTOR FILM AND GROWTH METHOD, GAN SYSTEM SEMICONDUCTOR FILM AND ITS FORMATION, GAN SYSTEM SEMICONDUCTOR STACKED STRUCTURE AND ITS FORMATION, AND GAN SYSTEM SEMICONDUCTOR ELEMENT AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To suppress the introduction of defects by suppressing cracks generated by difference in the thermal expansion coefficients between a growing III-V comp. semiconductor layer and a substrate crystal, and a difference in grid constants. SOLUTION: Through the use of a substrate limiting a growing region 13 by a mask 14, the facet structure of a III-V comp. semiconductor film 15 is formed (b) by epitaxial growth, for growing (c) the facet structure to cover the mask 14. In addition, the facet structure is completely embedded (d). A III-V comp. semiconductor layer with a flat surface is finally formed (e).