| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma-etching method with which the organic antireflection film, which is formed on a base material layer having a stepping, can be patterned in a highly precise manner. SOLUTION: An organic antireflection film 6 is plasma-etched using a compound, having a carbonyl group and a halogen atom, such as an etching gas containing COC1, for example. Consequently, as a highly stable sidewall protective film 8, which is mainly composed of carbon polymer having superior etching resistivity, is formed on the side face of a resist pattern 7 and the organic antireflection film 6 which is being patterned, an undercut and the differences in dimensional conversion can be prevented. |
