发明名称 Method of growing crystals
摘要 A process of growing crystals in which the uniformity of the oxygen concentration is desirable. In the process, the upper part of the material in the crucible is heated to form a molten layer, and a solid layer is formed at its lower part, then a seed crystal is made to contact the surface of the molten layer, and pulled up to grow a crystal, while characteristically a magnetic field is applied to the molten layer. This method produces single crystals with a uniform distribution of oxygen concentration. Furthermore, this method produces single crystals at low cost and with a high productivity.
申请公布号 US5840116(A) 申请公布日期 1998.11.24
申请号 US19970933987 申请日期 1997.09.19
申请人 SUMITOMO SITIX CORPORATION 发明人 KUBO, TAKAYUKI
分类号 C30B15/02;C30B15/00;C30B15/30;C30B29/06;H01L21/208;(IPC1-7):C30B15/12 主分类号 C30B15/02
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