发明名称 Dielectric multilayered reflector
摘要 The dielectric multilayered reflector of the invention is formed on at least one of two emitting surfaces of a semiconductor laser device. The dielectric multilayered reflector includes: a multilayered structure formed by stacking a plurality of layers; and a layer made of magnesium difluoride. In this dielectric multilayered reflector, the multilayered structure includes at least one layer made of an oxide dielectric material and the layer made of magnesium difluoride is formed on a surface of an outermost layer of the multilayered structure.
申请公布号 US5841584(A) 申请公布日期 1998.11.24
申请号 US19960639989 申请日期 1996.04.26
申请人 SHARP KABUSHIKI KAISHA 发明人 TAKATANI, KUNIHIRO;OKUMURA, TOSHIYUKI
分类号 H01S5/00;G02B1/10;H01L23/64;H01S5/028;(IPC1-7):G02B1/10 主分类号 H01S5/00
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