发明名称 |
Dielectric multilayered reflector |
摘要 |
The dielectric multilayered reflector of the invention is formed on at least one of two emitting surfaces of a semiconductor laser device. The dielectric multilayered reflector includes: a multilayered structure formed by stacking a plurality of layers; and a layer made of magnesium difluoride. In this dielectric multilayered reflector, the multilayered structure includes at least one layer made of an oxide dielectric material and the layer made of magnesium difluoride is formed on a surface of an outermost layer of the multilayered structure.
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申请公布号 |
US5841584(A) |
申请公布日期 |
1998.11.24 |
申请号 |
US19960639989 |
申请日期 |
1996.04.26 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TAKATANI, KUNIHIRO;OKUMURA, TOSHIYUKI |
分类号 |
H01S5/00;G02B1/10;H01L23/64;H01S5/028;(IPC1-7):G02B1/10 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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