| 摘要 |
A semiconductor memory circuit designed so as to prevent delay in redundancy access and increase in the chip area due to lengthy wiring between the redundancy control circuit (the redundancy fuse circuits) and the redundancy cell arrays. Redundancy cell arrays 30-32 are placed in a plurality of memory cell arrays 20-23, and the corresponding redundancy fuse circuits 80-82 disposed to make a line with the redundancy word drivers 51-53, respectively. For example, when a defective address is selected 4n redundancy fuse circuit 80, a redundancy judgment signal RDN suspends all the sense amplifier controllers 40, 43 and 44. A redundancy control information RED1 instructs to select a redundancy word driver 51 and the sense amplifier controllers 41 and 42, to select the redundancy cell array 30.
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