| 摘要 |
PROBLEM TO BE SOLVED: To deposit a thin amorphous semiconductor with low defect density by specifying the SiH radical rotary temperature in the vicinity of a substrate and keeping the substrate temperature lower than the radical rotary temperature. SOLUTION: The system for deposit a thin amorphous semiconductor comprises a meshed radical heater 24 for heating SiH radicals, a radical temperature measuring section comprising an incident side member comprising an YAG laser 2 for measuring the SiH radical rotary temperature, a light receiving side member comprising a filter 8 and a computer 11, and a radical heater controller 12 for controlling the SiH radical rotary temperature at 350 deg.C or above based on a measured SiH radical rotary temperature. Temperature of the meshed radical heater 24 is varied such that the SiH radical rotary temperature is kept constant at 380 deg.C, for example, at the time of every deposition. Since the rotary temperature of SiH radical can be controlled at a constant level, an amorphous semiconductor can be deposited stably with low defect density. |
