| 摘要 |
A first polysilicon film is deposited on a substrate and selectively etched to form a gate opening having a vertical side wall. Next, a second polysilicon film is deposited and anisotropically etched to form a side spacer on the side wall of the gate opening. The exposed surface of the first polysilicon and side spacer is oxidized to form a silicon oxide film having a cusp with a sharp edge over the gate opening. Thereafter, an emitter electrode material film is formed on the silicon oxide film to form a tip of a field emission emitter in the cusp. Lastly, the silicon oxide film around the field emission emitter is removed. A method of manufacturing a field emission type element of high performance is provided in which a field emission emitter having a small radius of curvature and small apex angle of the emitter tip is formed in self-alignment with a small diameter gate opening.
|
