发明名称 |
Method for evaluating oxygen concentrating in semiconductor silicon single crystal |
摘要 |
A method and apparatus for evaluating an oxygen concentration in a semiconductor silicon single crystal highly doped with boron at a low cost with a high sensitivity and high reproducibility. The single crystal, which is doped with boron of a high concentration of 1017 atoms/cm3 or higher, is irradiated with a light having a greater energy than that of bandgap of the semiconductor silicon while holding the single crystal at a temperature of room temperature to 50 K and photoluminescence intensities in the vicinity of a photon energy of 0.96 eV of a photoluminescence spectrum emitted from the single crystal under the above irradiation are measured to evaluate an oxygen concentration in the single crystal.
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申请公布号 |
US5841532(A) |
申请公布日期 |
1998.11.24 |
申请号 |
US19970800393 |
申请日期 |
1997.02.14 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
YOSHIDA, TOMOSUKE;KITAGAWARA, YUTAKA |
分类号 |
G01N21/64;H01L21/66;(IPC1-7):G01N21/64 |
主分类号 |
G01N21/64 |
代理机构 |
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地址 |
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