| 摘要 |
PROBLEM TO BE SOLVED: To form an active layer having an inhomogeneous crystal structure by heating an In-contg. III nitride crystal layer at a specified rate and heating temp. for specified time, and cooling it at a first and a second different rates. SOLUTION: An In-contg. III nitride semiconductor crystal layer formed at a temp. T (650 deg.C<T<=950 deg.C) is heated at 30 deg.C/min. of more from T to T' (950 deg.C<T'<=1200 deg.C). The total time for heating the crystal layer at T' is limited to 60 min. or less. This layer is then cooled at 20 deg.C/min. or more from T' to 950 deg.C in a first step and less than 20 deg.C/min. from 950 deg.C to 650 deg.C in a second step. Limiting the cooling rate forms a slave phase in a main phase and accelerates inhomogenizing the crystal structure or the compsn. of the In-contg. III nitride active layer to form a III nitride semiconductor active layer. |
