发明名称 INTEGRATION TYPE SEMICONDUCTOR LASER ELEMENT AND PRODUCTION THEREOF
摘要 PROBLEM TO BE SOLVED: To make a laser element have a high coupling efficiency by directly forming an optical waveguide part at light-emitting end faces of a laser beam of a semiconductor laser part to facilitate the height alignment between the semiconductor laser element and the optical waveguide. SOLUTION: Relating to a laser part, an etching stopping layer 108 and clad layers or the like 101-103 are laminated on a substrate 100 and a diffraction grating is formed on them from a guide layer 104 and an absorption layer 105. Moreover, a second clad layers 106 and a contact layers 107 are laminated on them. The optical waveguide part is made to be in hollow structure whose bottom and whose side faces, whose upper surface are respectively constituted of the substrate 100 and the etching stopping layer 108, lamination structures of semiconductors and a substrate 141. An integration type semiconductor laser element is made to be in structure which the semiconductor laser part and the optical waveguide part are directly coupled. Thus, since light- emitting end faces of a laser which have active layers 102 are directly coupled with the hollow optical waveguide, a coupling loss is not generated because there are no unwanted layers in between the active layers 102 and the optical waveguide and there is no deviation of height mostly.
申请公布号 JPH10311921(A) 申请公布日期 1998.11.24
申请号 JP19970120440 申请日期 1997.05.12
申请人 SHARP CORP 发明人 NISHIMOTO HIROYUKI;SHIMONAKA ATSUSHI
分类号 G02B6/122;H01S5/00;(IPC1-7):G02B6/122;H01S3/18 主分类号 G02B6/122
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