发明名称 |
STRUTTURA DI UN DISPOSITIVO DI MEMORIA A SEMICONDUTTORE NON VOLATILE |
摘要 |
A nonvolatile semiconductor memory device structure having a matrix of memory cells in a semiconductor material layer. The memory cells are located at intersections of rows and columns of the matrix. Each memory cell includes a control gate electrode connected to one of the rows, a first electrode connected to one of the columns and a second electrode. The rows comprise polysilicon strips extending parallel to each other in a first direction, and the columns are formed by metal strips extending parallel to each other in a second direction orthogonal to the first direction. Short-circuit metal strips are coupled for short-circuiting the second electrodes of the memory cells. The columns and the short-circuit strips arc respectively formed in a first metal level and a second metal level superimposed on each other and electrically insulated by a dielectric layer. |
申请公布号 |
ITMI971167(A1) |
申请公布日期 |
1998.11.20 |
申请号 |
IT1997MI01167 |
申请日期 |
1997.05.20 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L |
发明人 |
ZATELLI NICOLA;PIO FEDERICO;VAJANA BRUNO |
分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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