发明名称 |
SPACER STRUCTURE AS TRANSISTOR GATE |
摘要 |
A semiconductor process in which a spacer support stucture is then formed on an upper surface of a semiconductor substrate. The semiconductor substrate includes a channel region that is laterally displaced between first and second source/drain regions. The spacer support structure includes a substantially vertical sidewall that is laterally aligned over a boundary between the first source/drain region and the channel region of the semiconductor substrate. A gate dielectric is then grown and a transistor gate fabricated by forming a first spacer structure on the sidewall of the spacer support structure. The first spacer structure includes a substantially vertical first sidewall in contact with the spacer support structure sidewall and further includes a second sidewall that is laterally aligned over a boundary between the channel region and the second source/drain region of the semiconductor substrate. The spacer support structure is then removed and source/drain impurity distributions are introduced into the source/drain regions of the semiconductor substrate. |
申请公布号 |
WO9852215(A1) |
申请公布日期 |
1998.11.19 |
申请号 |
WO1998US06889 |
申请日期 |
1998.04.07 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARNDER, MARK, I.;SPIKES, THOMAS, E. |
分类号 |
H01L21/28;H01L21/336;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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